High Damage Threshold Pockel Cell Q Switch For SHG Na : Lasers At 1064nm

High Damage Threshold RTP Pockels Cell For SHG Na: lasers At 1064nm

Products Description:

RTP crystal appealing because it is not sensitive to moisture. easy to handle and coat, and also it does not exhibit piezo-electric ringing at elevated repetition rate. Moreover, RTP exhibits high electro-optic coefficients that allow the monitoring of Pockels cell with low power voltage requirement,

As RTP is transparent from 0.4 to 3.5um, it can be used in multiple types of laser such as Er:YAG laser at 2.94um with fairly good efficiency. Bulk absorption measurements at 1.064um range from

50 to 150ppm using Photothermal Common Path Interferometer.

RTP has a fairly high surface damage threshold at 15J/cm? (1064nm, 10ns, 10Hz).

ADVANTAGES:

• An excellent crystal for Electro Optical applications at high repetition rate.
• High Damage Threshold.
• No Piezoelectric Ringing.
• Low Insertion Loss.
• Thermal Compensating Design.
• Non-hygroscopic.
• High Extinction and Contrast Ratio.
• Spectral range 500-3000 nm.
• Not induce piezo-electric effect.

APPLICATION:

• SHG Na: lasers at 1064nm.
• Electro-Optical Q-switch and modulation for optical waveguides.
• Optical Parametric Amplifiers (OPA) and Oscillators (OPO) application.

switching modulator

kdp pockels cell

High Damage Threshold Pockel Cell Q Switch For SHG Na : Lasers At 1064nm Images